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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4531 DESCRIPTION With TO-3P(H)IS package High voltage,high speed Low saturation voltage Bult-in damper diode APPLICATIONS Horizontal deflection output applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 1500 600 5 Collector-base voltage Open emitter Collector-emitter voltage Open base Emitter-base voltage Open collector Collector current Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature TC=25ae 10 20 5 50 150 -55~150 UNIT V V V A A A W ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4531 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Collector output capacitance Diode forward voltage Transition frequency CONDITIONS IE=200mA ;IC=0 IC=7A; IB=1.7A IC=7A; IB=1.7A VCB=500V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IE=0 ; VCB=10V,f=1MHz IF=7A 66 8 210 pF 1.8 V MHz 100 MIN 5 5 1.5 10 200 |I TYP. MAX UNIT V V V A mA SYMBOL V(BR)EBO VCEsat VBEsat ICBO IEBO hFE Cob VF fT Switching times resistive load ts tf Storage time NDU ICO E SEM ANG INCH IC=0.1A ; VCE=10V 1 ICP=7A;IB1 =1.4A IB2 =-2.8A; RL=28.5| Fall time TOR 1.5 3 1.8 0.1 2.5 0.2 |I |I s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4531 TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions (unindicated tolerance:A 0.20 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4531 TOR NDU ICO E SEM ANG INCH 4 |
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